Design and analysis of multi-layer ZrO2-based resistive random access memory (RRAM) for next-generation non-volatile memory

Abstract

This paper presents a RRAM (Resistive Random Access Memory) device having multiple buffer layers of HfOx and TiOx along with switching layer of ZrO2 to improve the overall performance of the device. Utilizing Technology Computer Aided Design (TCAD) software, the set and reset operations of the RRAM device are simulated, focusing on the formation and separation of conductive filaments (oxygen vacancy) in response to applied voltages